Erratum: Carrier recombination mechanism at defects in wide band gap two-dimensional materials from first principles [Phys. Rev. B 100, 081407(R) (2019)]

Figure 1

Atomic structure of $N_{\mathrm{B}}{V}_{\mathrm{N}}$ in monolayer $h$-BN with a $8\times 8$ supercell (black box). Boron (green) and nitrogen (gray) atoms in color are within the radius of atoms which are fully relaxed (red dashed circle with a radius of 6 Å), and atoms outside of this circle are fixed (black) to their pristine atomic positions. This is a new figure, not in the original paper.

Figure 2

Defect levels and possible defect-defect transitions of $N{}_B{V}_N$ in monolayer $h$-BN. Both up and down spin channels of the $2{\mathrm{B}}_1/1{\mathrm{B}}_1$ transitions are marked in red as they are optically allowed with light polarized along defect $C_2$ symmetry axis.