Abstract
One of the major puzzles in condensed matter physics has been the observation of a Mott-insulating state away from half-filling. Several theoretical proposals aimed to elucidate this phenomenon have been put forth, a notable one being phase separation and an associated percolation-induced Mott insulator-metal transition. In the present work we study the prototypical doped Mott-insulating rare-earth titanate , in which the insulating state survives up to a large hole concentration of 35%. Single crystals of with , spanning the insulator-metal transition, are grown and investigated. Using x-ray absorption spectroscopy, a powerful technique capable of probing element-specific electronic states, we find that the primary effect of hole doping is to induce electronic phase separation into hole-rich and hole-poor regions. The data reveal the formation of electronic states within the Mott-Hubbard gap, near the Fermi level, which increase in spectral weight with increasing doping. From a comparison with calculations, we infer that the hole-poor and hole-rich components have charge densities that correspond to the insulating and metallic states, respectively, and that the new electronic states arise from the metallic component. Our results indicate that the doping-induced insulator-metal transition in is indeed percolative in nature, and thus of inherent first-order character.
- Received 2 April 2021
- Accepted 21 June 2021
DOI:https://doi.org/10.1103/PhysRevB.104.045112
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