Abstract
The coexistence of Mott localized states with wide conduction and valence bands in -electron semiconductors results, quite generically, in a complex optical response with the nature of the absorption edge difficult to resolve both experimentally and theoretically. Here, we combine a dynamical mean-field theory approach to localized shells with an improved description of band gaps by a semilocal exchange-correlation potential to calculate the optical properties of the light rare-earth fluorosulfides (, Nd, Sm, Gd) from first principles. In agreement with experiment, we find the absorption edge in SmSF to stem from to transitions, while the Gd compound behaves as an ordinary gap semiconductor. In the unexplored PrSF and NdSF systems we predict a rather unique occurrence of strongly hybridized states at the bottom of the conduction band. The nature of the absorption edge results in a characteristic anisotropy of the optical conductivity in each system, which may be used as a fingerprint of the relative energetic positions of different states.
- Received 5 March 2021
- Accepted 25 May 2021
DOI:https://doi.org/10.1103/PhysRevB.103.L241105
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