• Letter

Pressure-induced double superconducting domes and charge instability in the kagome metal KV3Sb5

Feng Du, Shuaishuai Luo, Brenden R. Ortiz, Ye Chen, Weiyin Duan, Dongting Zhang, Xin Lu, Stephen D. Wilson, Yu Song, and Huiqiu Yuan
Phys. Rev. B 103, L220504 – Published 23 June 2021
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Abstract

The kagome metal KV3Sb5 hosts charge order, topologically nontrivial Dirac band crossings, and a superconducting ground state with unconventional characteristics, providing an ideal platform to investigate the interplay between different electronic states on the kagome lattice. Here we study the evolution of charge order and superconductivity in KV3Sb5 under hydrostatic pressure using electrical resistivity measurements. With the application of pressure, the superconducting transition temperature Tc=0.9 K under ambient pressure quickly increases to 3.1 K at p=0.4 GPa, as charge order progressively weakens. Upon further increasing pressure, signatures of charge order disappear at pc10.5 GPa and Tc is gradually suppressed, forming a superconducting dome that terminates at p10 GPa. Beyond p10 GPa, a second superconducting dome emerges with maximum Tc1.0 K at pc222 GPa, which becomes fully suppressed at p28 GPa. The suppression of superconductivity for the second superconducting dome is associated with the appearance of a unique high-pressure phase, possibly a distinct charge order.

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  • Received 28 February 2021
  • Accepted 8 June 2021

DOI:https://doi.org/10.1103/PhysRevB.103.L220504

©2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Feng Du1,2,*, Shuaishuai Luo1,2,*, Brenden R. Ortiz3, Ye Chen1,2, Weiyin Duan1,2, Dongting Zhang1,2, Xin Lu1,2, Stephen D. Wilson3, Yu Song1,2,†, and Huiqiu Yuan1,2,4,‡

  • 1Center for Correlated Matter and Department of Physics, Zhejiang University, Hangzhou 310058, China
  • 2Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310058, China
  • 3Materials Department and California Nanosystems Institute, University of California Santa Barbara, Santa Barbara, California 93106, USA
  • 4State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310058, China

  • *These authors contributed equally to this work.
  • yusong_phys@zju.edu.cn
  • hqyuan@zju.edu.cn

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Issue

Vol. 103, Iss. 22 — 1 June 2021

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