Abstract
Photogenerated fully spin-polarized current has attracted considerable attention in spintronics owing to its high efficiency for information processing but low energy consumption. However, the short spin carrier lifetime of the primary materials significantly impedes the practical application of spin-polarized current and presents a major challenge. Here, on the basis of density functional theory and nonadiabatic molecular dynamics simulations, we design two prototypes of two-dimensional (2D) ferromagnetic/nonmagnetic semiconductor heterostructures ( and ) with demonstrated ultralong photogenerated spin carrier lifetime. It is shown that the photogenerated spin holes can be effectively injected from the ferromagnetic layer to the nonmagnetic layer, and fully spin-polarized electrons will be confined in the ferromagnetic layer due to their type-II spin-polarized channel and large spin-flip gap. More surprisingly, the photogenerated spin carrier lifetime of these heterostructures is up to the time scale of nanoseconds. Such an ultralong spin carrier lifetime is mainly originated from small nonadiabatic coupling induced by weak spin electron-phonon interaction and slow nuclear velocity. Our results provide insights into the design of 2D semiconductor spintronic devices with an ultralong fully spin-polarized current lifetime.
- Received 27 February 2021
- Accepted 14 May 2021
DOI:https://doi.org/10.1103/PhysRevB.103.245411
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