Abstract
We present a temperature- and doping-dependent resonant inelastic x-ray scattering experiment at the V and O edges in thin films with and . This material is a canonical example of a compound that exhibits a filling-control metal-insulator transition and undergoes orbital ordering and antiferromagnetic transitions at low temperature. Temperature-dependent measurements at the V edge reveal an intra- excitation that blueshifts by 40 meV from room temperature to 30 K at a rate that differs between the para- and antiferromagnetic phases. The line shape can be partially explained by a purely local model using crystal field theory calculations. For the low Sr concentration , the doping is shown to affect the local electronic structure primarily on the O sites, beyond a simple Mott-Hubbard picture. Furthermore, the presence of phonon overtone features at the O edge evidences that the low-energy part of the spectrum is dominated by phonon response.
- Received 8 May 2020
- Revised 8 April 2021
- Accepted 21 May 2021
DOI:https://doi.org/10.1103/PhysRevB.103.235158
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