Weak Kondo effect in the monocrystalline transition metal dichalcogenide ZrTe2

Yihao Wang, Changzheng Xie, Junbo Li, Zan Du, Liang Cao, Yuyan Han, Lin Zu, Hongchao Zhang, Huamin Zhu, Xueying Zhang, Yimin Xiong, and Weisheng Zhao
Phys. Rev. B 103, 174418 – Published 17 May 2021

Abstract

Zr-Te compounds are an ideal platform to investigate novel electrical transport properties. Here we report the Kondo effect in single-crystalline ZrTe2. When T<8 K, ZrTe2 exhibits a logT dependence of resistivity, which may derive from three different mechanisms, including electron-electron interaction, weak localization, and Kondo effect. By measuring transport properties with magnetic field along different directions, the former two mechanisms were excluded. Isotropic negative magnetoresistance was extracted by subtracting different quadratic background signals caused by Lorentz force, which reveals the existence of a weak Kondo effect in this material.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 15 November 2020
  • Revised 28 April 2021
  • Accepted 3 May 2021

DOI:https://doi.org/10.1103/PhysRevB.103.174418

©2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Yihao Wang1,2, Changzheng Xie3, Junbo Li2,4, Zan Du2,4, Liang Cao2, Yuyan Han2, Lin Zu1, Hongchao Zhang5, Huamin Zhu5, Xueying Zhang1,5,*, Yimin Xiong2,6,†, and Weisheng Zhao1,5,‡

  • 1School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
  • 2Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui 230031, China
  • 3Universities Joint Key Laboratory of Photoelectric Detection Science and Technology in Anhui Province, School of Physics and Materials Engineering, Hefei Normal University, Hefei 230601, China
  • 4Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, Anhui 230026, China
  • 5Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266600, China
  • 6Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, China

  • *xueying.zhang@buaa.edu.cn
  • yxiong@hmfl.ac.cn
  • weisheng.zhao@buaa.edu.cn

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 103, Iss. 17 — 1 May 2021

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×