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Current-induced dynamics of skyrmion tubes in synthetic antiferromagnetic multilayers

Jing Xia, Xichao Zhang, Kai-Yu Mak, Motohiko Ezawa, Oleg A. Tretiakov, Yan Zhou, Guoping Zhao, and Xiaoxi Liu
Phys. Rev. B 103, 174408 – Published 7 May 2021

Abstract

Topological spin textures can be found in both two-dimensional and three-dimensional nanostructures, which are of great importance to advanced spintronic applications. Here we report the current-induced skyrmion tube dynamics in three-dimensional synthetic antiferromagnetic (SyAF) bilayer and multilayer nanostructures. It is found that the SyAF skyrmion tube made of thinner sublayer skyrmions is more stable during its motion, which ensures that a higher speed of the skyrmion tube can be reached effectively at larger driving current. In the SyAF multilayer with a given total thickness, the current-induced deformation of the SyAF skyrmion tube decreases with an increasing number of interfaces; namely, the rigidity of the SyAF skyrmion tube with a given thickness increases with the number of ferromagnetic (FM) layers. For the SyAF multilayer with an even number of FM layers, the skyrmion Hall effect can be eliminated when the thicknesses of all FM layers are identical. Larger damping parameter leads to smaller deformation and slower speed of the SyAF skyrmion tube. Larger fieldlike torque leads to larger deformation and a higher speed of the SyAF skyrmion tube. Our results are useful for understanding the dynamic behaviors of three-dimensional topological spin textures and may provide guidelines for building SyAF spintronic devices.

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  • Received 17 February 2021
  • Revised 20 April 2021
  • Accepted 21 April 2021

DOI:https://doi.org/10.1103/PhysRevB.103.174408

©2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Jing Xia1,2,*, Xichao Zhang3,*, Kai-Yu Mak2, Motohiko Ezawa4, Oleg A. Tretiakov5, Yan Zhou2,†, Guoping Zhao1,‡, and Xiaoxi Liu3,§

  • 1College of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610068, China
  • 2School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong 518172, China
  • 3Department of Electrical and Computer Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan
  • 4Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656, Japan
  • 5School of Physics, The University of New South Wales, Sydney, New South Wales 2052, Australia

  • *These authors contributed equally to this work.
  • zhouyan@cuhk.edu.cn
  • zhaogp@uestc.edu.cn
  • §liu@cs.shinshu-u.ac.jp

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Issue

Vol. 103, Iss. 17 — 1 May 2021

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