Abstract
Fully understanding the properties of n-type ferromagnetic semiconductors (FMSs), complementary to the mainstream -type ones, is a challenging goal in semiconductor spintronics because ferromagnetism in -type FMSs is theoretically nontrivial. Soft-x-ray angle-resolved photoemission spectroscopy (SX-ARPES) is a powerful approach to examine the mechanism of carrier-induced ferromagnetism in FMSs. Here our SX-ARPES study on the prototypical -type FMS (In,Fe)As reveals the entire band structure, including the Fe- impurity bands (IBs) and the host InAs ones, and provides direct evidence for electron occupation of the InAs-derived conduction band (CB). A minority-spin Fe- IB is found to be located just below the conduction-band minimum (CBM). The IB is formed by the hybridization of the unoccupied Fe states with the occupied CBM of InAs in a spin-dependent way, resulting in the large spin polarization of CB. The band structure with the IB is varied with band filling, which cannot be explained by the rigid-band picture, suggesting a unified picture for realization of carrier-induced ferromagnetism in FMS materials.
4 More- Received 29 August 2020
- Revised 14 November 2020
- Accepted 17 February 2021
DOI:https://doi.org/10.1103/PhysRevB.103.115111
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