Minority-spin impurity band in n-type (In,Fe)As: A materials perspective for ferromagnetic semiconductors

Masaki Kobayashi, Le Duc Anh, Jan Minár, Walayat Khan, Stephan Borek, Pham Nam Hai, Yoshihisa Harada, Thorsten Schmitt, Masaharu Oshima, Atsushi Fujimori, Masaaki Tanaka, and Vladimir N. Strocov
Phys. Rev. B 103, 115111 – Published 8 March 2021

Abstract

Fully understanding the properties of n-type ferromagnetic semiconductors (FMSs), complementary to the mainstream p-type ones, is a challenging goal in semiconductor spintronics because ferromagnetism in n-type FMSs is theoretically nontrivial. Soft-x-ray angle-resolved photoemission spectroscopy (SX-ARPES) is a powerful approach to examine the mechanism of carrier-induced ferromagnetism in FMSs. Here our SX-ARPES study on the prototypical n-type FMS (In,Fe)As reveals the entire band structure, including the Fe-3d impurity bands (IBs) and the host InAs ones, and provides direct evidence for electron occupation of the InAs-derived conduction band (CB). A minority-spin Fe-3d IB is found to be located just below the conduction-band minimum (CBM). The IB is formed by the hybridization of the unoccupied Fe 3d states with the occupied CBM of InAs in a spin-dependent way, resulting in the large spin polarization of CB. The band structure with the IB is varied with band filling, which cannot be explained by the rigid-band picture, suggesting a unified picture for realization of carrier-induced ferromagnetism in FMS materials.

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  • Received 29 August 2020
  • Revised 14 November 2020
  • Accepted 17 February 2021

DOI:https://doi.org/10.1103/PhysRevB.103.115111

©2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Masaki Kobayashi1,2,3,4,*, Le Duc Anh4,5,6, Jan Minár7, Walayat Khan8, Stephan Borek9, Pham Nam Hai3,4,10, Yoshihisa Harada11, Thorsten Schmitt1, Masaharu Oshima2, Atsushi Fujimori12,13, Masaaki Tanaka3,4, and Vladimir N. Strocov1

  • 1Swiss Light Source, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland
  • 2Department of Applied Chemistry, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • 3Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • 4Center for Spintronics Research Network, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • 5Institute of Engineering Innovation, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • 6PRESTO, JST, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan
  • 7New -Technologies: Research Center, University of West Bohemia, Pilsen, Czech Republic
  • 8Bacha Khan University, Charsadda, KPK, Pakistan
  • 9Deutsches Zentrum für Luft- und Raumfahrt (DLR), Oberpfaffenhofen, 82234 Weßling, Germany
  • 10Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-0033, Japan
  • 11Institute for Solid State Physics, The University of Tokyo, 1-1-1 Koto, Sayo, Hyogo 679-5198, Japan
  • 12Department of Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
  • 13Department of Applied Physics, Waseda University, Okubo, Shinjuku, Tokyo 169-8555, Japan

  • *masaki.kobayashi@ee.t.u-tokyo.ac.jp

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Issue

Vol. 103, Iss. 11 — 15 March 2021

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