Giant Nernst effect and field-enhanced transversal zNT in ZrTe5

Peipei Wang, Chang-woo Cho, Fangdong Tang, Peng Wang, Wenjie Zhang, Mingquan He, Genda Gu, Xiaosong Wu, Yonghong Shao, and Liyuan Zhang
Phys. Rev. B 103, 045203 – Published 26 January 2021
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Abstract

Thermoelectric materials can recover electrical energy from waste heat and vice versa, which are of great significance in green energy harvesting and solid state refrigerators. The thermoelectric figure of merit (zT) quantifies the energy conversion efficiency, and a large Seebeck or Nernst effect is crucial for the development of thermoelectric devices. Here we present a significantly large Nernst thermopower in topological semimetal ZrTe5, which is attributed to both strong Berry curvature and bipolar transport. The largest in-plane Sxy (when B//b) approaches 1900 μV/K at T=100 K and B = 13 T, and the out-of-plane Sxz (when B//c) reaches 5000 μV/K. As a critical part of zNT, the linearly increased in-plane Sxy and resistivity ρyy in regard to B induces an almost linear increasing transversal zNT without saturation under high fields. The maximum zNT of 0.12 was obtained at B = 13 T and T=120 K, which significantly surmounts its longitudinal counterpart under the same condition.

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  • Received 16 November 2020
  • Accepted 11 January 2021

DOI:https://doi.org/10.1103/PhysRevB.103.045203

©2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Peipei Wang1,2, Chang-woo Cho2, Fangdong Tang2, Peng Wang2, Wenjie Zhang3, Mingquan He4, Genda Gu5, Xiaosong Wu3, Yonghong Shao1,*, and Liyuan Zhang2,†

  • 1Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectric Engineering, Shenzhen University, 518060 Shenzhen, China
  • 2Department of Physics, Southern University of Science and Technology, 518055 Shenzhen, China
  • 3State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Beijing Key Laboratory of Quantum Devices, Peking University, 100871 Beijing, China
  • 4Low Temperature Physics Lab, College of Physics & Center for Quantum Materials and Devices, Chongqing University, Chongqing 400044, China
  • 5Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA

  • *Corresponding author: shaoyh@szu.edu.cn
  • zhangly@sustech.edu.cn

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Issue

Vol. 103, Iss. 4 — 15 January 2021

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