Electron-phonon coupling in n-type Ge two-dimensional systems

C. Ciano, L. Persichetti, M. Montanari, L. Di Gaspare, G. Capellini, L. Baldassarre, M. Ortolani, A. Pashkin, M. Helm, S. Winnerl, M. Virgilio, and M. De Seta
Phys. Rev. B 102, 205302 – Published 16 November 2020

Abstract

Electron-optical phonon interaction is the dominant energy-loss mechanism in low-dimensional Ge/SiGe heterostructures and represents a key parameter for the design and realization of electronic and optoelectronic devices based on this material system compatible with the mainstream Si complementary metal-oxide semiconductor technology. Here we investigate the intersubband relaxation dynamics of n-type Ge/SiGe multiquantum wells with different symmetry and design by means of single-color pump-probe spectroscopy. By comparing the experimental differential transmittance data as a function of the pump-probe delay with numerical calculations based on an energy-balance rate-equation model, we could quantify an effective value for the optical phonon deformation potential describing the electron-phonon coupling in two-dimensional Ge-based systems. We found nonradiative relaxation times longer than 20 ps even in samples having intersubband energy separations larger than the optical phonon energy, evidencing the presence of a less effective electron-phonon coupling with respect to that estimated in bulk Ge.

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  • Received 31 August 2020
  • Accepted 27 October 2020

DOI:https://doi.org/10.1103/PhysRevB.102.205302

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

C. Ciano1, L. Persichetti1,*, M. Montanari1, L. Di Gaspare1, G. Capellini1,2, L. Baldassarre3, M. Ortolani3, A. Pashkin4, M. Helm4,5, S. Winnerl4, M. Virgilio6,†, and M. De Seta1,‡

  • 1Dipartimento di Scienze, Università degli Studi Roma Tre, Viale G. Marconi 446, I-00146, Roma, Italy
  • 2IHP – Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany
  • 3Dipartimento di Fisica, Università di Roma Sapienza, Piazzale A. Moro 2, I-00185 Rome, Italy
  • 4Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, D-01328 Dresden, Germany
  • 5Institut für Angewandte Physik, TU Dresden, D-01062 Dresden, Germany
  • 6Dipartimento di Fisica “E. Fermi,” Università di Pisa, Largo Pontecorvo 3, I-56127 Pisa, Italy

  • *luca.persichetti@uniroma3.it
  • michele.virgilio@unipi.it
  • monica.deseta@uniroma3.it

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Issue

Vol. 102, Iss. 20 — 15 November 2020

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