Quantum geometric contributions to the BKT transition: Beyond mean field theory

Zhiqiang Wang, Gaurav Chaudhary, Qijin Chen, and K. Levin
Phys. Rev. B 102, 184504 – Published 4 November 2020

Abstract

We study quantum geometric contributions to the Berezinskii-Kosterlitz-Thouless (BKT) transition temperature TBKT in the presence of fluctuations beyond BCS theory. Because quantum geometric effects become progressively more important with stronger pairing attraction, a full understanding of 2D multiorbital superconductivity requires the incorporation of preformed pairs. We find it is through the effective mass of these pairs that quantum geometry enters the theory and this suggests that the quantum geometric effects are present in the nonsuperconducting pseudogap phase as well. Increasing these geometric contributions tends to raise TBKT, which then competes with fluctuation effects that generally depress it. We argue that a way to physically quantify the magnitude of these geometric terms is in terms of the ratio of the pairing onset temperature T* to TBKT. Our paper calls attention to an experimental study demonstrating how both temperatures and, thus, their ratio may be currently accessible. They can be extracted from the same voltage-current measurements, which are generally used to establish BKT physics. We use these observations to provide rough preliminary estimates of the magnitude of the geometric contributions in, for example, magic angle twisted bilayer graphene.

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  • Received 3 August 2020
  • Revised 16 October 2020
  • Accepted 20 October 2020

DOI:https://doi.org/10.1103/PhysRevB.102.184504

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Zhiqiang Wang1, Gaurav Chaudhary1, Qijin Chen2, and K. Levin1

  • 1James Franck Institute, University of Chicago, Chicago, Illinois 60637, USA
  • 2Shanghai Branch, National Laboratory for Physical Sciences at Microscale and Department of Modern Physics, University of Science and Technology of China, Shanghai 201315, China

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Vol. 102, Iss. 18 — 1 November 2020

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