Dirac fermions in the antiferromagnetic spintronics material CuMnAs

Shao-Gang Xu, Zhong-Jia Chen, Xin-Bo Chen, Yu-Jun Zhao, Hu Xu, and Xiuwen Zhang
Phys. Rev. B 102, 125123 – Published 15 September 2020
PDFHTMLExport Citation

Abstract

Dirac semimetals (DSMs) are the focus of study as new candidates for topological superconductivity and spintronics. Although the Dirac points are not necessarily associated with crystalline symmetries, the experimentally realized robust DSMs such as Cd3As2 have fourfold-degenerate Dirac points at generic wave vectors on high symmetry line enabled by a fourfold crystalline symmetry. The magnetic counterpart of these robust DSMs remains unknown. On the other hand, the theoretically proposed magnetic DSMs in potential antiferromagnetic (AFM) spintronics materials where both time-reversal (T) and inversion (P) symmetry are broken but their combination PT is preserved have Dirac points on the boundary of the Brillouin zone protected by a low-order twofold crystalline symmetry. Here, combined with first-principles calculations and symmetry analysis, we find the Dirac fermion at generic wave vector on high symmetry line with associated nontrivial surface states in PT-symmetric tetragonal CuMnAs, which is the prototype AFM spintronics material observed in experiments. Furthermore, we reveal the hidden spin textures in this PT-symmetric magnetic system, demonstrating interesting vortex-like spin textures. Our study opens the way for designing robust magnetic DSMs that can serve as an ideal platform to study the interplay of magnetism, Dirac fermions, and spin-orbit interactions, and could stimulate a series of research in the field of topological antiferromagnetic spintronics.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 18 December 2019
  • Revised 12 June 2020
  • Accepted 5 August 2020

DOI:https://doi.org/10.1103/PhysRevB.102.125123

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Shao-Gang Xu1,*, Zhong-Jia Chen2,3,*, Xin-Bo Chen1, Yu-Jun Zhao3, Hu Xu2,†, and Xiuwen Zhang1,‡

  • 1Shenzhen Key Laboratory of Flexible Memory Materials and Devices, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
  • 2Department of Physics, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
  • 3Department of Physics, South China University of Technology, Guangzhou 510640, People's Republic of China

  • *These authors contributed equally to this work.
  • xuh@sustech.edu.cn
  • xiuwenzhang@szu.edu.cn

Article Text (Subscription Required)

Click to Expand

Supplemental Material (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 102, Iss. 12 — 15 September 2020

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×