Hall resistance anomalies in the integer and fractional quantum Hall regime

E. Peraticos, S. Kumar, M. Pepper, A. Siddiki, I. Farrer, D. Ritchie, G. Jones, and J. Griffiths
Phys. Rev. B 102, 115306 – Published 23 September 2020

Abstract

Experimental evidence of resistance anomalies in the high-mobility two-dimensional electron gas (2DEG) formed in the GaAs/AlGaAs heterostructure, in the integer and fractional quantized Hall regime, is shown. The data complement to a good approximation the semianalytic calculations used to describe the formation of integral and fractional incompressible strips. The widths of current-carrying channels were calculated by incorporating the screening properties of the 2DEG and the effect of a magnetic field in the perpendicular mode. The many-body effects of the composite fermions are taken into consideration for the energy gap for the fractional states. It is shown that incompressible strips at the edges for both integer and fractional filling factors coexist in their evanescent phase for a particular range of magnetic fields, resulting in overshoot effects at the Hall resistance. Specifically, anomalous Hall resistances were noticed for filling factors ν = 43, 32, 53, 83, 3, 103, 72, and 5. This effect is explained and discussed using the screening theory.

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  • Received 11 June 2020
  • Revised 19 August 2020
  • Accepted 3 September 2020

DOI:https://doi.org/10.1103/PhysRevB.102.115306

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

E. Peraticos*, S. Kumar, and M. Pepper

  • Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom and London Centre for Nanotechnology, 17-19 Gordon Street, London WC1H 0AH, United Kingdom

A. Siddiki

  • Department of Electrical and Electronics Engineering, Maltepe Üniversitesi, Marmara Egitim Köyü, Maltepe, Istanbul 34857, Turkey

I. Farrer, D. Ritchie, G. Jones, and J. Griffiths

  • Cavendish Laboratory, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom

  • *elias.peraticos.10@ucl.ac.uk
  • Also at Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield S10 2TN, United Kingdom.

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Issue

Vol. 102, Iss. 11 — 15 September 2020

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