Strain-tunable ferromagnetism and chiral spin textures in two-dimensional Janus chromium dichalcogenides

Qirui Cui, Jinghua Liang, Ziji Shao, Ping Cui, and Hongxin Yang
Phys. Rev. B 102, 094425 – Published 22 September 2020
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Abstract

Using first-principles calculations and micromagnetic simulations, we systematically investigate the magnetic properties of two-dimensional Janus chromium dichalcogenides (CrXTe, X=S, Se) under strain. We find that the CrSTe monolayer has high Curie temperature (Tc) of 295 K and an out-of-plane magnetic anisotropy. The CrSeTe monolayer has large Dzyaloshinskii-Moriya interaction (DMI) which can host chiral Néel domain wall (DW), and under an external magnetic field, the skyrmion states can be induced. As tensile strain increases, ferromagnetic exchange coupling and perpendicular magnetic anisotropy of Janus CrXTe monolayers both increase significantly, and the magnitude of DMI is reduced, which results in the giant ferromagnetism enhancement. Interestingly, for CrSeTe monolayer, distinct spin textures from chiral DW to uniform ferromagnetic states are induced under tensile strain. Moreover, the diameter and density of skyrmions in CrSeTe can be tuned by the amplitude of external magnetic field and strain. These findings highlight that the Janus CrXTe monolayers as good candidates for spintronic nanodevices.

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  • Received 10 May 2020
  • Revised 16 July 2020
  • Accepted 1 September 2020

DOI:https://doi.org/10.1103/PhysRevB.102.094425

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Qirui Cui1,2, Jinghua Liang1, Ziji Shao1,4, Ping Cui1,2, and Hongxin Yang1,3,*

  • 1Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
  • 2Faculty of Science and Engineering, University of Nottingham Ningbo China, Ningbo, China
  • 3Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 4College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China

  • *hongxin.yang@nimte.ac.cn

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Issue

Vol. 102, Iss. 9 — 1 September 2020

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