Magnetization generated by microwave-induced Rashba interaction

O. Entin-Wohlman, R. I. Shekhter, M. Jonson, and A. Aharony
Phys. Rev. B 102, 075419 – Published 10 August 2020
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Abstract

We show that a controllable dc magnetization is accumulated in a junction comprising a quantum dot coupled to nonmagnetic reservoirs if the junction is subjected to a time-dependent spin-orbit interaction. The latter is induced by an ac electric field generated by microwave irradiation of the gated junction. The magnetization is caused by inelastic spin-flip scattering of electrons that tunnel through the junction, and depends on the polarization of the electric field: a circularly polarized field leads to the maximal effect, while there is no effect in a linearly polarized field. Furthermore, the magnetization increases as a step function (smoothened by temperature) as the microwave photon energy becomes larger than the absolute value of the difference between the single energy level on the quantum dot and the common chemical potential in the leads.

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  • Received 13 July 2020
  • Accepted 21 July 2020

DOI:https://doi.org/10.1103/PhysRevB.102.075419

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

O. Entin-Wohlman1,*, R. I. Shekhter2, M. Jonson2, and A. Aharony1

  • 1School of Physics and Astronomy, Tel Aviv University, Tel Aviv 69978, Israel
  • 2Department of Physics, University of Gothenburg, SE-412 96 Göteborg, Sweden

  • *orawohlman@gmail.com

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Issue

Vol. 102, Iss. 7 — 15 August 2020

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