• Open Access

Statistically modeling optical linewidths of nitrogen vacancy centers in microstructures

M. Kasperczyk, J. A. Zuber, A. Barfuss, J. Kölbl, V. Yurgens, S. Flågan, T. Jakubczyk, B. Shields, R. J. Warburton, and P. Maletinsky
Phys. Rev. B 102, 075312 – Published 27 August 2020
PDFHTMLExport Citation

Abstract

We investigate the relationship between ion implantation and the optical linewidth of the nitrogen vacancy (NV) zero-phonon line (ZPL) in bulk and structured samples. We also propose a novel approach to ion implantation that we name postimplantation, in which nitrogen is implanted after all fabrication processes have been completed. We examine three post-implanted samples, one implanted with N14 and two with N15 isotopes. We perform photoluminescence excitation (PLE) spectroscopy to assess optical linewidths and optically detected magnetic resonance (ODMR) measurements to isotopically classify the NV centers. From this, we find that NV centers formed from nitrogen naturally occurring in the diamond lattice are characterized by a linewidth distribution peaked at an optical linewidth nearly two orders of magnitude smaller than the distribution characterizing most of the NV centers formed from implanted nitrogen. Surprisingly, we also observe a number of NV15 centers with narrow (<500MHz) linewidths, implying that implanted nitrogen can yield NV centers with narrow optical linewidths. We further use a Bayesian approach to statistically model the linewidth distributions, to accurately quantify the uncertainty of fit parameters in our model, and to predict future linewidths within a particular sample. Our model is designed to aid comparisons between samples and research groups, in order to determine the best methods of achieving narrow NV linewidths in structured samples.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 1 May 2020
  • Accepted 5 August 2020

DOI:https://doi.org/10.1103/PhysRevB.102.075312

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

M. Kasperczyk, J. A. Zuber, A. Barfuss, J. Kölbl, V. Yurgens, S. Flågan, T. Jakubczyk, B. Shields, R. J. Warburton, and P. Maletinsky*

  • Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland

  • *patrick.maletinsky@unibas.ch

Article Text

Click to Expand

Supplemental Material

Click to Expand

References

Click to Expand
Issue

Vol. 102, Iss. 7 — 15 August 2020

Reuse & Permissions
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Reuse & Permissions

It is not necessary to obtain permission to reuse this article or its components as it is available under the terms of the Creative Commons Attribution 4.0 International license. This license permits unrestricted use, distribution, and reproduction in any medium, provided attribution to the author(s) and the published article's title, journal citation, and DOI are maintained. Please note that some figures may have been included with permission from other third parties. It is your responsibility to obtain the proper permission from the rights holder directly for these figures.

×

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×