Analysis of mobility-limiting mechanisms of the two-dimensional hole gas on hydrogen-terminated diamond

Ricardo Peterson, Mohamadali Malakoutian, Xiaoqing Xu, Caitlin Chapin, Srabanti Chowdhury, and Debbie G. Senesky
Phys. Rev. B 102, 075303 – Published 10 August 2020

Abstract

Here, we present an analysis of the mobility-limiting mechanisms of a two-dimensional hole gas on hydrogen-terminated diamond surfaces. The scattering rates of surface impurities, surface roughness, nonpolar optical phonons, and acoustic phonons are included. Using a Schrödinger/Poisson solver, the heavy-hole, light-hole, and split-off bands are treated separately. To compare the calculations with experimental data, Hall-effect devices were fabricated and measured at temperatures ranging from 25 to 700 K with hole sheet densities ranging from 2 to 6×1012cm2 and typical mobilities measured from 60 to 100cm2V1s1 at room temperature. Existing data from literature were also used, which span sheet densities above 1×1013cm2. Our analysis indicates that, for low sheet densities, surface impurity scattering by charged acceptors and surface roughness are not sufficient to account for the low mobility. Moreover, the experimental data suggest that long-range potential fluctuations exist at the diamond surface and are, particularly, enhanced at lower sheet densities. Thus, a second type of surface impurity scattering is proposed and is presumed to arise by disorder related to the carbon-hydrogen dipoles.

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  • Received 17 April 2020
  • Revised 29 June 2020
  • Accepted 27 July 2020

DOI:https://doi.org/10.1103/PhysRevB.102.075303

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Ricardo Peterson1, Mohamadali Malakoutian2, Xiaoqing Xu3, Caitlin Chapin4, Srabanti Chowdhury1,2, and Debbie G. Senesky4,*

  • 1Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
  • 2Department of Electrical and Computer Engineering, University of California, Davis, California 95616, USA
  • 3Stanford Nanofabrication Facility, Stanford University, Stanford, California 94305, USA
  • 4Department of Aeronautics and Astronautics, Stanford University, Stanford, California 94305, USA

  • *Author to whom correspondence should be addressed: dsenesky@stanford.edu

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Vol. 102, Iss. 7 — 15 August 2020

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