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Independent degrees of freedom in two-dimensional materials

Sake Wang, F. R. Pratama, M. Shoufie Ukhtary, and Riichiro Saito
Phys. Rev. B 101, 081414(R) – Published 27 February 2020

Abstract

In hexagonal two-dimensional (2D) materials such as graphene, hexagonal boron nitride, or transition metal dichalcogenides, electrons possess intrinsic degrees of freedom (DOFs): sublattice pseudospin, spin, and valley. Independent polarization of the DOFs for carrying information can be harnessed in future semiconductor industry. Here we propose a general Hamiltonian based on the Haldane model with spin-orbit coupling (SOC) which realizes the independence of all the DOFs that can tune optical absorption spectra as a function of the SOC. The present result suggests a new 2D material or a new 2D electronic device which offers any combination of pseudospintronics, spintronics, and valleytronics applications.

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  • Received 18 October 2019
  • Revised 13 February 2020
  • Accepted 18 February 2020

DOI:https://doi.org/10.1103/PhysRevB.101.081414

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Sake Wang1,2,*, F. R. Pratama1, M. Shoufie Ukhtary1, and Riichiro Saito1

  • 1Department of Physics, Tohoku University, Sendai 980-8578, Japan
  • 2College of Science, Jinling Institute of Technology, Nanjing 211169, China

  • *sake@flex.phys.tohoku.ac.jp

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Issue

Vol. 101, Iss. 8 — 15 February 2020

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