Tunneling spectroscopy of an indium adatom precisely manipulated on the cross-sectional surface of InAs/GaSb quantum structures

Kyoichi Suzuki, Koji Onomitsu, and Kiyoshi Kanisawa
Phys. Rev. B 100, 235306 – Published 18 December 2019

Abstract

Indium atom manipulation was achieved on the (110) cross-sectional surface of a quantum structure consisting of InAs/GaSb multilayer using a scanning tunneling microscope (STM) at low temperature. Positioning, removing, and lateral displacement by means of tip-induced hopping was performed on both InAs and GaSb layers. Electron tunneling via the electron orbital of the manipulated atom (adatom) was observed not only on the InAs layer but also on the GaSb layer, even when the energy of the orbital was in the GaSb band gap. The tunneling process from the STM tip to the InAs conduction band via the adatom and the GaSb band gap is explained well by the single electron tunneling model through the double-barrier tunneling junction. In the case of the adatom being very close to the InAs/GaSb heterointerface, interference with the electron tunneling to the InAs conduction electronic states through the GaSb barrier with/without passing the adatom was observed. The peak energy in the tunneling spectrum corresponding to the orbital of the adatom depends on the adatom position on the GaSb, demonstrating the fundamental interactions between the surface atomic-scale structures and semiconductor heterostructures.

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  • Received 11 October 2019
  • Revised 4 November 2019

DOI:https://doi.org/10.1103/PhysRevB.100.235306

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Kyoichi Suzuki1,2,*, Koji Onomitsu2, and Kiyoshi Kanisawa2

  • 1Fukuoka Institute of Technology, 3-30-1, Wajiro-Higashi, Higashi-ku, Fukuoka 811-0295, Japan
  • 2NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atshugi-shi, Kanagawa 243-0198, Japan

  • *k-suzuki@fit.ac.jp

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Issue

Vol. 100, Iss. 23 — 15 December 2019

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