Topological crystalline insulator state with type-II Dirac fermions in transition metal dipnictides

Baokai Wang, Bahadur Singh, Barun Ghosh, Wei-Chi Chiu, M. Mofazzel Hosen, Qitao Zhang, Li Ying, Madhab Neupane, Amit Agarwal, Hsin Lin, and Arun Bansil
Phys. Rev. B 100, 205118 – Published 12 November 2019

Abstract

The interplay between topology and crystalline symmetries in materials can lead to a variety of topological crystalline insulator (TCI) states. Despite significant effort towards their experimental realization, so far only Pb1xSnxTe has been confirmed as a mirror-symmetry-protected TCI. Here, based on first-principles calculations combined with a symmetry analysis, we identify a rotational-symmetry-protected TCI state in the transition metal dipnictide RX2 family, where R=Ta or Nb and X=P, As, or Sb. Taking TaAs2 as an exemplar system, we show that its low-energy band structure consists of two types of bulk nodal lines in the absence of spin-orbit coupling (SOC) effects. Turning on the SOC opens a continuous band gap in the energy spectrum and drives the system into a C2T-symmetry-protected TCI state. On the (010) surface, we show the presence of rotational-symmetry-protected nontrivial Dirac cone states within a local bulk energy gap of 300meV. Interestingly, the Dirac cones have tilted energy dispersion, realizing a type-II Dirac fermion state in a topological crystalline insulator. Our results thus indicate that the TaAs2 materials family provides an ideal setting for exploring the unique physics associated with type-II Dirac fermions in rotational-symmetry-protected TCIs.

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  • Received 10 August 2019

DOI:https://doi.org/10.1103/PhysRevB.100.205118

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Baokai Wang1, Bahadur Singh1,2,*, Barun Ghosh3, Wei-Chi Chiu1, M. Mofazzel Hosen4, Qitao Zhang2, Li Ying2, Madhab Neupane4, Amit Agarwal3, Hsin Lin5, and Arun Bansil1,†

  • 1Department of Physics, Northeastern University, Boston, Massachusetts 02115, USA
  • 2SZU-NUS Collaborative Center and International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology, Engineering Technology Research Center for 2D Materials Information Functional Devices and Systems of Guangdong Province, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
  • 3Department of Physics, Indian Institute of Technology Kanpur, Kanpur 208016, India
  • 4Department of Physics, University of Central Florida, Orlando, Florida 32816, USA
  • 5Institute of Physics, Academia Sinica, Taipei 11529, Taiwan

  • *Corresponsing author: bahadursingh24@gmail.com
  • Corresponsing author: ar.bansil@northeastern.edu

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Issue

Vol. 100, Iss. 20 — 15 November 2019

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