Abstract
Resonant photoelectron spectroscopy at the Co and Mn core absorption edges of half-metallic has been performed to determine the element-specific density of states (DOS). A significant contribution of the Mn partial DOS near the Fermi level was clarified by measurement at the Mn absorption edge. Further analysis by first-principles calculation revealed that it has symmetry, which must be responsible for the electrical conductivity along the line perpendicular to the film plane. The dominant normal Auger contribution observed at the Co absorption edge indicates delocalization of photoexcited Co electrons. The difference in the degrees of localization of the Mn and Co electrons in is explained by the first-principles calculation. Our findings of the element-/orbital-specific electronic states near will pave the way for future interface design of magnetic tunneling junctions to overcome the temperature-induced reduction of the magnetoresistance.
- Received 24 July 2019
DOI:https://doi.org/10.1103/PhysRevB.100.165120
©2019 American Physical Society