Abstract
Combining first-principles calculations and experiment, we investigate the atomic and electronic structure of the Si/EuO interface. We consider the thermodynamic stability of interface structures with different levels of oxidation to identify the most probable configuration. By comparing the calculated band alignment and core-level shifts with measured values, we validate the theoretically constructed interface model. We find that the band offset can be tuned by altering the relative energy positions of the Si and EuO conduction bands via interface oxidation, which can be used to tune this materials system for specific applications in spintronics.
4 More- Received 6 July 2019
DOI:https://doi.org/10.1103/PhysRevB.100.155303
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