Band offset modulation in Si-EuO heterostructures via controlled interface formation

Wente Li, Agham B. Posadas, and Alexander A. Demkov
Phys. Rev. B 100, 155303 – Published 16 October 2019

Abstract

Combining first-principles calculations and experiment, we investigate the atomic and electronic structure of the Si/EuO interface. We consider the thermodynamic stability of interface structures with different levels of oxidation to identify the most probable configuration. By comparing the calculated band alignment and core-level shifts with measured values, we validate the theoretically constructed interface model. We find that the band offset can be tuned by altering the relative energy positions of the Si and EuO conduction bands via interface oxidation, which can be used to tune this materials system for specific applications in spintronics.

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  • Received 6 July 2019

DOI:https://doi.org/10.1103/PhysRevB.100.155303

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Wente Li, Agham B. Posadas, and Alexander A. Demkov*

  • Department of Physics, The University of Texas, Austin, Texas 78712, USA

  • *demkov@physics.utexas.edu

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Issue

Vol. 100, Iss. 15 — 15 October 2019

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