Evidence of structural modifications in the region around the broad dielectric maxima in the 30% Sn-doped barium titanate relaxor

Akash Surampalli, Irene Schiesaro, Pietro Corsi, Carlo Meneghini, V. G. Sathe, Archna Sagdeo, A. K. Sinha, Giuliana Aquilanti, Edmund Welter, and V. Raghavendra Reddy
Phys. Rev. B 100, 134104 – Published 18 October 2019

Abstract

The structural and dielectric characterization of 30% Sn-doped BaTiO3 (BaSn0.3Ti0.7O3) as a function of temperature is carried out combining, complementary probes to reveal structural modifications associated to the relaxor behavior. Dielectric data confirms the existence of relaxor-type behavior in BaSn0.3Ti0.7O3. The local and average structural changes as a function of temperature have been investigated in the region of broad changes of dielectric response. Local probes, such as x-ray absorption fine structure spectroscopy and Mössbauer spectroscopy reveal a special trend of the lattice related to the diffuse dielectric phase transition as observed from dielectric data. The analysis of Raman spectra as a function of temperature reveals a peculiar behavior in the temperature region corresponding to the dielectric transition. The analysis of x-ray diffraction patterns points out a pseudocubic structure throughout the temperature range while the volume exhibits a negative thermal expansion in the region of broad dielectric maximum. Our results suggest structural modifications occurring in the system throughout a wide temperature range, interestingly, associated with changes in macroscopic properties of relaxors such as dispersion in dielectric constants and raising of dipole moments.

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  • Received 27 June 2019
  • Revised 24 September 2019

DOI:https://doi.org/10.1103/PhysRevB.100.134104

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Akash Surampalli1, Irene Schiesaro2, Pietro Corsi2, Carlo Meneghini2,*, V. G. Sathe1, Archna Sagdeo3,4, A. K. Sinha3,4, Giuliana Aquilanti5, Edmund Welter6, and V. Raghavendra Reddy1,†

  • 1UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001, India
  • 2Dipartimento di Scienze, Universita di Roma Tre, I-00146 Roma, Italy
  • 3Synchrotron Utilization Section, RRCAT, Indore India
  • 4Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400094, India
  • 5Sincrotrone Trieste, SS 14, Km 163.5, I-34012 Basovizza, Trieste, Italy
  • 6Deutsches Elektronen-Synchrotron - A Research Centre of the Helmholtz Association, Hamburg 22607, Germany

  • *carlo.meneghini@uniroma3.it; cmeneghi@gmail.com
  • varimalla@yahoo.com; vrreddy@csr.res.in

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Issue

Vol. 100, Iss. 13 — 1 October 2019

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