Mapping gradient-driven morphological phase transition at the conductive domain walls of strained multiferroic films

M. J. Han, E. A. Eliseev, A. N. Morozovska, Y. L. Zhu, Y. L. Tang, Y. J. Wang, X. W. Guo, and X. L. Ma
Phys. Rev. B 100, 104109 – Published 11 September 2019
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Abstract

The coupling between antiferrodistortion (AFD) and ferroelectric (FE) polarization, universal for all tilted perovskite multiferroics, is known to strongly correlate with domain wall functionalities in the materials. The intrinsic mechanisms of domain wall phenomena, especially AFD-FE coupling-induced phenomena at the domain walls, have continued to intrigue the scientific and technological communities because of the need to develop future nanoscale electronic devices. Over the past years, theoretical studies have often shown controversial results, owing to the fact that they are neither sufficiently nor directly corroborated with experimental evidence. In this work, the AFD-FE coupling at uncharged 180° and 71° domain walls in BiFeO3 films is investigated by means of aberration-corrected scanning transmission electron microscopy with high-resolution scanning transmission electron microscopy and rationalized by phenomenological Landau-Ginzburg-Devonshire (LGD) theory. We reveal a peculiar morphology at the AFD-FE walls, including kinks, meandering, and trianglelike regions with opposite oxygen displacements and curvature near the interface. The LGD theory confirms that the tilt gradient energy induces these unusual morphologies and the features would change delicately with different kinds of domain walls. Moreover, the 180° AFD-FE walls are proved to be conductive with an unexpected reduction of the Fe-O-Fe bond angle, which is distinct from theoretical predictions. By exploring AFD-FE coupling at the domain walls, and its induced functionalities, we provide exciting evidence into the links between structural distortions and its electronic properties, which provide great benefit for fundamental understanding of domain wall functionalities as well as functional manipulations for novel nanodevices.

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  • Received 22 April 2019
  • Revised 15 August 2019

DOI:https://doi.org/10.1103/PhysRevB.100.104109

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

M. J. Han1,2, E. A. Eliseev3, A. N. Morozovska4,*, Y. L. Zhu1, Y. L. Tang1, Y. J. Wang1, X. W. Guo1,5, and X. L. Ma1,6,†

  • 1Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, 110016 Shenyang, China
  • 2University of Chinese Academy of Sciences, Yuquan Road 19, 100049 Beijing, China
  • 3Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Krjijanovskogo 3, 03142 Kyiv, Ukraine
  • 4Institute of Physics, National Academy of Sciences of Ukraine, 46, Prospekt Nauky, 03028 Kyiv, Ukraine
  • 5University of Science and Technology of China, Jinzhai Road 96, 230026 Hefei, China
  • 6State Key Lab of Advanced Processing and Recycling on Non-ferrous Metals, Lanzhou University of Technology, Langongping Road 287, 730050 Lanzhou, China

  • *anna.n.morozovska@gmail.com
  • xlma@imr.ac.cn

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Issue

Vol. 100, Iss. 10 — 1 September 2019

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