FeTe0.55Se0.45 van der Waals tunneling devices

Ayelet Zalic, Shahar Simon, Sergei Remennik, Atzmon Vakahi, Genda D. Gu, and Hadar Steinberg
Phys. Rev. B 100, 064517 – Published 20 August 2019

Abstract

We report on fabrication of devices integrating FeTe0.55Se0.45 with other van der Waals materials, measuring transport properties as well as tunneling spectra at variable magnetic fields and temperatures down to 35 mK. Transport measurements are reliable and repeatable, revealing temperature and magnetic field dependence in agreement with prior results, confirming that fabrication processing does not alter bulk properties. However, cross-sectional scanning transmission microscopy reveals oxidation of the surface, which may explain a lower yield of tunneling device fabrication. We nonetheless observe hard-gap planar tunneling into FeTe0.55Se0.45 through a MoS2 barrier. Notably, a minimal hard gap of 0.5 meV persists up to a magnetic field of 9 T in the ab plane and 3 T out of plane. This may be the result of very small junction dimensions or a quantum-limit minimal energy spacing between vortex bound states. We also observe defect-assisted tunneling, exhibiting bias-symmetric resonant states, which may arise due to resonant Andreev processes.

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  • Received 29 May 2019
  • Revised 28 July 2019

DOI:https://doi.org/10.1103/PhysRevB.100.064517

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Ayelet Zalic1,*, Shahar Simon1,*, Sergei Remennik2, Atzmon Vakahi2, Genda D. Gu3, and Hadar Steinberg1,2,†

  • 1Racah Institute of Physics, Hebrew University of Jerusalem, Jerusalem 91904, Israel
  • 2Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem, 91904, Israel
  • 3Brookhaven National Laboratory, Condensed Matter Physics and Materials Science Department, Upton, New York 11973, USA

  • *These authors contributed equally to this work.
  • Corresponding author: hadar@phys.huji.ac.il

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Issue

Vol. 100, Iss. 6 — 1 August 2019

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