Thermal conductivity in intermetallic clathrates: A first-principles perspective

Daniel O. Lindroth, Joakim Brorsson, Erik Fransson, Fredrik Eriksson, Anders Palmqvist, and Paul Erhart
Phys. Rev. B 100, 045206 – Published 24 July 2019
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Abstract

Inorganic clathrates such as Ba8GaxGe46x and Ba8AlxSi46x commonly exhibit very low thermal conductivities. A quantitative computational description of this important property has proven difficult, in part due to the large unit cell, the role of disorder, and the fact that both electronic carriers and phonons contribute to transport. Here, we conduct a systematic analysis of the temperature and composition dependence of low-frequency modes associated with guest species in Ba8GaxGe46x and Ba8AlxSi46x (“rattler modes”), as well as thermal transport in stoichiometric Ba8Ga16Ge30. To this end, we account for phonon-phonon interactions by means of temperature-dependent effective interatomic force constants, which we find to be crucial in order to achieve an accurate description of the lattice part of the thermal conductivity. While the analysis of the thermal conductivity is often largely focused on the rattler modes, here it is shown that at room temperatures modes with ω10meV account for 50% of lattice heat transport. Finally, the electronic contribution to the thermal conductivity is computed, which shows the Wiedemann-Franz law to be only approximately fulfilled. As a result, it is crucial to employ the correct prefactor when separating electronic and lattice contributions for experimental data.

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  • Received 4 July 2018
  • Revised 18 June 2019

DOI:https://doi.org/10.1103/PhysRevB.100.045206

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Daniel O. Lindroth1, Joakim Brorsson2, Erik Fransson1, Fredrik Eriksson1, Anders Palmqvist2, and Paul Erhart1,*

  • 1Department of Physics, Chalmers University of Technology, Gothenburg S-41296, Sweden
  • 2Department of Chemistry and Chemical Engineering, Chalmers University of Technology, Gothenburg S-41296, Sweden

  • *erhart@chalmers.se

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Issue

Vol. 100, Iss. 4 — 15 July 2019

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