Strongly anisotropic high-temperature Fermi surface of the Kondo semimetal CeNiSn revealed by angle-resolved photoemission spectroscopy

Cédric Bareille, T.-S. Nam, Toshiro Takabatake, Kenta Kuroda, Takeshi Yajima, Mitsuhiro Nakayama, So Kunisada, Shuntaro Akebi, Masato Sakano, Shunsuke Sakuragi, Ryo Noguchi, Byung Il Min, Shik Shin, and Takeshi Kondo
Phys. Rev. B 100, 045133 – Published 23 July 2019
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Abstract

The semimetallic behavior of the so-called “failed Kondo insulator” CeNiSn has been ascribed to a nodal line in the Kondo hybridization derived from a particular symmetry of the Ce 4f orbitals ground state. Here we investigate the geometry of the CeNiSn conduction band by combined angle-resolved photoemission spectroscopy (ARPES) in the high-temperature regime and Open core generalized gradient approximation plus spin-orbit coupling calculations, in order to determine how the nodal hybridization takes place. We identify the Fermi sheet involved in the semimetallic regime from its locus and its shape, respectively, in agreement with the expected nodal line and with quantum oscillations. We further extrapolate and discuss the low-temperature Fermi surface in terms of the expected nodal hybridization with a localized f-level. The obtained hypothetical low-temperature Fermi surface is compatible with the description from quantum oscillations, and with both the highly anisotropic magnetoresistance and the isotropic Nernst effect. This work offers an overview of the conduction band of CeNiSn before hybridization, and it paves the way to a definitive understanding of its low-temperature state. In addition, this work serves as a basis for more challenging low-temperature ARPES measurements.

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  • Received 31 March 2019
  • Revised 17 May 2019

DOI:https://doi.org/10.1103/PhysRevB.100.045133

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Cédric Bareille1,*,†, T.-S. Nam2,†, Toshiro Takabatake3, Kenta Kuroda1, Takeshi Yajima1, Mitsuhiro Nakayama1, So Kunisada1, Shuntaro Akebi1, Masato Sakano4, Shunsuke Sakuragi1, Ryo Noguchi1, Byung Il Min2, Shik Shin1, and Takeshi Kondo1

  • 1ISSP, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
  • 2Department of Physics, POSTECH, Pohang 37673, Korea
  • 3Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima 739-8530, Japan
  • 4Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Hongo, Tokyo 113-8656, Japan

  • *bareille@issp.u-tokyo.ac.jp
  • These authors contributed equally to this work.

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Issue

Vol. 100, Iss. 4 — 15 July 2019

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