Nonmonotonic bias dependence of local spin accumulation signals in ferromagnet/semiconductor lateral spin-valve devices

Y. Fujita, M. Yamada, M. Tsukahara, T. Naito, S. Yamada, K. Sawano, and K. Hamaya
Phys. Rev. B 100, 024431 – Published 29 July 2019
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Abstract

We find extraordinary behavior of the local two-terminal spin accumulation signals in ferromagnet (FM)/semiconductor (SC) lateral spin-valve devices. With respect to the bias voltage applied between two FM/SC Schottky tunnel contacts, the local spin accumulation signal can show nonmonotonic variations, including a sign inversion. A part of the nonmonotonic features can be understood qualitatively by considering the rapid reduction in the spin polarization of the FM/SC interfaces with increasing bias voltage. In addition to the sign inversion of the FM/SC interface spin polarization, the influence of the spin-drift effect in the SC layer and the nonlinear electrical spin conversion at a biased FM/SC contact are discussed.

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  • Received 6 January 2018
  • Revised 12 April 2019

DOI:https://doi.org/10.1103/PhysRevB.100.024431

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Y. Fujita1,*, M. Yamada1, M. Tsukahara1, T. Naito1, S. Yamada2,1, K. Sawano3, and K. Hamaya2,1,†

  • 1Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531, Japan
  • 2Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531, Japan
  • 3Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082, Japan

  • *Present address: Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS),1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.
  • hamaya@ee.es.osaka-u.ac.jp

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Issue

Vol. 100, Iss. 2 — 1 July 2019

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