Angular Dependence of the Spin Photocurrent in a CoFeB/MgO/nip GaAs Quantum-Well Structure

Laipan Zhu, Wei Huang, Pierre Renucci, Xavier Marie, Yu Liu, Yuan Li, Qing Wu, Yang Zhang, Bo Xu, Yuan Lu, and Yonghai Chen
Phys. Rev. Applied 8, 064022 – Published 20 December 2017
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Abstract

We evidence at room temperature the detection of photogenerated spin currents by using a magnetic electrode without the need of an external magnetic field. The device is based on a semiconductor (Al,Ga)As/GaAs quantum well embedded in a pin junction. The spin filtering is performed owing to a CoFeB/MgO electrode with in-plane magnetization. We observe a helicity-dependent photocurrent when the device is excited under oblique incidence with circularly polarized light. The helicity-dependent photocurrent is explored as a function of the incident and azimuth angles of the incoming light wave vector with respect to the magnetization direction of the magnetic electrode. The results are interpreted as a consequence of the photogenerated average electron spin under oblique incidence in a quantum well governed by optical selection rules involving electron-heavy-hole and electron-light-hole transitions. A systematic study of the helicity asymmetry as a function of the photon energy and applied bias is performed. It demonstrates that this asymmetry is at its maximum close to the GaAs quantum well and (Al,Ga)As bulk optical transitions. The asymmetry can be controlled by an external bias on the structure. Finally, we show that this asymmetry decreases when the temperature increases.

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  • Received 20 July 2017

DOI:https://doi.org/10.1103/PhysRevApplied.8.064022

© 2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Laipan Zhu1,5, Wei Huang1,2, Pierre Renucci4, Xavier Marie4, Yu Liu1,2, Yuan Li1,2, Qing Wu1,2, Yang Zhang1,2, Bo Xu1,2, Yuan Lu3,†, and Yonghai Chen1,2,*

  • 1Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine, BP 239, 54506 Vandœuvre, France
  • 4Université de Toulouse, INSA-CNRS-UPS, LPCNO,135 Avenue de Rangueil, F-31077 Toulouse, France
  • 5Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China

  • *Corresponding author. yhchen@semi.ac.cn
  • Corresponding author. yuan.lu@univ-lorraine.fr

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Issue

Vol. 8, Iss. 6 — December 2017

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