Scintillation Properties and Electronic Structures of the Intrinsic and Extrinsic Mixed Elpasolites Cs2NaRBr3I3 (R=La, Y)

Hua Wei, Mao-Hua Du, Luis Stand, Zhao Zhao, Hongliang Shi, Mariya Zhuravleva, and Charles L. Melcher
Phys. Rev. Applied 5, 024008 – Published 19 February 2016
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Abstract

Scintillators attract wide research interest for their distinct applications in radiation detection. Elpasolite halides are among the most promising scintillators due to their high structural symmetry and good scintillation performance. A better understanding of their underlying scintillation mechanism opens up possibilities in scintillator development. In this work, we employ a variety of experimental techniques to study the two mixed-anion elpasolites Cs2NaRBr3I3 (R=La, Y). The emission of intrinsic Cs2NaRBr3I3 with a light yield ranging from 20 000 to 40000ph/MeV is dominant by self-trapped exciton emission. Partial substitution of R with Ce introduces a competing emission, the Ce3+ 5d-to-4f radiative transition. Ab initio calculations are performed to investigate the electronic structures as well as the binding energies of polarons in Cs2NaRBr6. The calculated large self-trapped exciton binding energies are consistent with the observed high light yield due to self-trapped exciton (STE) emission. The unique electronic structure of halide elpasolites as calculated enhances the STE stability and the STE emission. The highly tunable scintillation properties of mixed-anion elpasolites underscore the role of their complex scintillation mechanism. Our study provides guidance for the design of elpasolite scintillators with exceptional energy resolution and light yield desirable for applications.

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  • Received 15 July 2015

DOI:https://doi.org/10.1103/PhysRevApplied.5.024008

© 2016 American Physical Society

Physics Subject Headings (PhySH)

Interdisciplinary Physics

Authors & Affiliations

Hua Wei1,*, Mao-Hua Du2, Luis Stand1, Zhao Zhao3, Hongliang Shi2, Mariya Zhuravleva1, and Charles L. Melcher1

  • 1Department of Materials Science and Engineering, Scintillation Materials Research Center, University of Tennessee, Knoxville, Tennessee 37996, USA
  • 2Advanced Materials Group, Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
  • 3Department of Physics, Stanford University, Stanford, California 94305, USA

  • *Present address: Radiation Monitoring Devices Inc., 44 Hunt Street, Watertown, MA, 02472, USA. sundyhw@gmail.com

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Vol. 5, Iss. 2 — February 2016

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