Fermi-Level-Dependent Charge-to-Spin Conversion of the Two-Dimensional Electron Gas at the γ-Al2O3/KTaO3 Interface

Hui Zhang, Zengtai Zhu, Yungu Zhu, Xiaobing Chen, Qisheng Jiang, Jinwu Wei, Chenbo Zhao, Jine Zhang, Furong Han, Huaiwen Yang, Dapeng Zhu, Hao Wu, Yuansha Chen, Fengxia Hu, Baogen Shen, Weisheng Zhao, Jing Zhang, Guoqiang Yu, and Jirong Sun
Phys. Rev. Applied 19, 034045 – Published 14 March 2023
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Abstract

Charge-to-spin conversion is crucial for the application of emerging spintronic devices. A two-dimensional electron gas (2DEG) at a complex oxide interface usually possesses strong Rashba spin-orbit coupling, and spin-momentum locking offers a great possibility for efficient charge-to-spin conversion through the Rashba-Edelstein effect. Here, we report the fabrication of metallic 2DEGs in γ-Al2O3/KTaO3 spinel/perovskite heterostructures and investigate the charge-to-spin conversion for Py/γ-Al2O3/KTaO3 devices using the technique of spin-torque ferromagnetic resonance. The sizable spin splitting of the band structure results in a large current-induced spin-orbit torque efficiency with values up to around 3.6 at 5 K and about 1.1 at 300 K, which are more than an order of magnitude higher than those of heavy metals (0.07 for Pt at 300 K). Moreover, both theoretical and experimental results show that the charge-to-spin conversion is strongly dependent on the position of the Fermi level. These results demonstrate that optimizing the band filling of a KTaO3-based 2DEG is crucial for maximizing the conversion efficiency.

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  • Received 17 August 2022
  • Revised 6 December 2022
  • Accepted 10 February 2023

DOI:https://doi.org/10.1103/PhysRevApplied.19.034045

© 2023 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Hui Zhang1,*, Zengtai Zhu2, Yungu Zhu1, Xiaobing Chen3,4,5, Qisheng Jiang2, Jinwu Wei6, Chenbo Zhao7,8, Jine Zhang1, Furong Han1, Huaiwen Yang1, Dapeng Zhu1, Hao Wu2, Yuansha Chen3,4, Fengxia Hu2,3,4, Baogen Shen2,3,4, Weisheng Zhao1, Jing Zhang2,†, Guoqiang Yu2,3,9,‡, and Jirong Sun2,3,4,10,§

  • 1School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
  • 2Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
  • 3Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 4School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
  • 5Shenzhen Institute for Quantum Science and Engineering (SIQSE) and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
  • 6Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, China
  • 7School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong 518172, China
  • 8Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
  • 9Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 10Spintronics Institute, Jinan University, Jinan 250022, Shandong Provence, China

  • *huizh@buaa.edu.cn
  • zhangjing@sslab.org.cn
  • guoqiangyu@iphy.ac.cn
  • §jrsun@iphy.ac.cn

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Issue

Vol. 19, Iss. 3 — March 2023

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