Doping-induced Polar Defects Improve the Electrocaloric Performance of Ba0.9Sr0.1Hf0.1Ti0.9O3

Junning Li, Jing Lv, Dawei Zhang, Lixue Zhang, Xihong Hao, Ming Wu, Bai-Xiang Xu, Mojca Otonicar, Turab Lookman, Brahim Dkhil, and Xiaojie Lou
Phys. Rev. Applied 16, 014033 – Published 13 July 2021
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Abstract

In materials science, intentional doping has been widely used to improve the properties of a variety of materials. However, such an approach is not yet exploited in the fast-growing field of electrocaloric materials, which represent a serious alternative for next-generation cooling systems. Here we demonstrate with Ba0.9Sr0.1Hf0.1Ti0.9O3, an ecofriendly ferroelectric material, that doping with 2% of Cu introduces defect dipoles into the ferroelectric matrix and results in (i) enhancement of the adiabatic temperature change ΔT by up to 54% while maintaining performance after a large number (up to 104) of electric field cycles, (ii) suppression of the parasitic irreversibility of ΔT between on-field and off-field states, and (iii) an alternative design of refrigeration cycle with a prepoled sample, allowing a two-field-step process showing both conventional (ΔT > 0) and inverse (ΔT < 0) responses when the field is sequentially varied. We also demonstrate that doping significantly increases the energy storage density (by up to 72%). The defect engineering approach therefore offers a path for designing ferroelectrics with improved electrocaloric performances. Beyond ferroelectrics, this strategy could also be promising in other solid-state caloric materials (magnetocalorics, elastocalorics, etc.).

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  • Received 29 September 2020
  • Revised 25 April 2021
  • Accepted 21 June 2021

DOI:https://doi.org/10.1103/PhysRevApplied.16.014033

© 2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Junning Li1, Jing Lv1, Dawei Zhang1, Lixue Zhang1, Xihong Hao2, Ming Wu1, Bai-Xiang Xu3, Mojca Otonicar4, Turab Lookman5, Brahim Dkhil6,*, and Xiaojie Lou1,†

  • 1Frontier Institute of Science and Technology, and State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
  • 2Inner Mongolia Key Laboratory of Advanced Ceramic Materials and Devices, Inner Mongolia University of Science and Technology, Baotou 014010, China
  • 3Institute of Materials Science, Technical University of Darmstadt, 64287 Darmstadt, Germany
  • 4Electronic Ceramics Department, Jožef Stefan Institute, Jamova cesta 39, 1000 Ljubljana, Slovenia
  • 5Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico, 87545, USA
  • 6Laboratoire Structures, Proprétés et Modélisation des Solides, CentraleSupélec, CNRS-UMR8580, Université Paris-Saclay, 91190 Gif-sur-Yvette, France

  • *brahim.dkhil@centralesupelec.fr
  • xlou03@163.com

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Vol. 16, Iss. 1 — July 2021

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