Abstract
In this work, we investigate the spin and valley transport properties of a monolayer placed on top of a ferromagnetic insulator. We are interested in controlling the transport properties by applying external potentials to the system. To obtain spin and valley polarizations, we consider a single- and a double-barrier structure with gate potentials. We analyze how the efficiency of these polarized transport properties depends on the gate-potential intensities and geometrical configurations. Additionally, we investigate how the spin and valley transport properties are modified when an ac potential is applied to the system. We obtain a controllable modulation of the spin and valley polarizations as a function of the intensity and frequency of the ac potential, mainly in the terahertz range. These results validate the proposal of double quantum well structures of as candidates to provide spin- and valley-dependent transport within an optimal geometrical parameter regime.
4 More- Received 5 January 2021
- Revised 25 February 2021
- Accepted 9 March 2021
DOI:https://doi.org/10.1103/PhysRevApplied.15.034069
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