Defect-Level Switching for Highly Nonlinear and Hysteretic Electronic Devices

Han Yin, Abinash Kumar, James M. LeBeau, and R. Jaramillo
Phys. Rev. Applied 15, 014014 – Published 8 January 2021
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Abstract

Nonlinear and hysteretic electrical devices are needed for applications from circuit protection to next-generation computing. Widely-studied devices for resistive switching are based on mass transport, such as the drift of ions in an electric field, and on collective phenomena, such as insulator-metal transitions. We ask whether the large photoconductive response known in many semiconductors can be stimulated in the dark and harnessed to design electrical devices. We design and test devices based on photoconductive CdS, and our results are consistent with the hypothesis that resistive switching arises from point defects that switch between deep- and shallow-donor configurations: defect-level switching. This electronic device design principle, photoconductivity without photons, leverages decades of research on photoconductivity and defect spectroscopy. It is easily generalized and will enable the rational design of nonlinear hysteretic devices for future electronics.

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  • Received 16 May 2020
  • Revised 2 December 2020
  • Accepted 7 December 2020

DOI:https://doi.org/10.1103/PhysRevApplied.15.014014

© 2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Han Yin1, Abinash Kumar2, James M. LeBeau2, and R. Jaramillo2,*

  • 1Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  • 2Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

  • *rjaramil@mit.edu

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Vol. 15, Iss. 1 — January 2021

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