Cryogenic Memory Element Based on an Anomalous Josephson Junction

C. Guarcello and F.S. Bergeret
Phys. Rev. Applied 13, 034012 – Published 4 March 2020

Abstract

We propose a nonvolatile memory element based on a lateral ferromagnetic Josephson junction with spin-orbit coupling and out-of-plane magnetization. The interplay between the latter and the intrinsic exchange field of the ferromagnet leads to a magnetoelectric effect that couples the charge current through the junction and its magnetization, such that by applying a current pulse the direction of the magnetic moment in F can be switched. The two memory states are encoded in the direction of the out-of-plane magnetization. With the aim to determine the optimal working temperature for the memory element, we explore the noise-induced effects on the averaged stationary magnetization by taking into account thermal fluctuations affecting both the Josephson phase and the magnetic moment dynamics. We investigate the switching process as a function of intrinsic parameters of the ferromagnet, such as the Gilbert damping and strength of the spin-orbit coupling, and propose a nondestructive readout scheme based on a dc superconducting quantum interference device. Additionally, we analyze a way to protect the memory state from external perturbations by voltage gating in systems with a both linear-in-momentum Rashba and Dresselhaus spin-orbit coupling.

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  • Received 26 September 2019
  • Revised 16 January 2020
  • Accepted 14 February 2020

DOI:https://doi.org/10.1103/PhysRevApplied.13.034012

© 2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

C. Guarcello1,2,* and F.S. Bergeret1,3

  • 1Centro de Física de Materiales, Centro Mixto CSIC-UPV/EHU, Paseo Manuel de Lardizabal 5, 20018 San Sebastián, Spain
  • 2Dipartimento di Fisica “E.R. Caianiello”, Università di Salerno, Via Giovanni Paolo II, 132, I-84084 Fisciano, SA, Italy
  • 3Donostia International Physics Center, Paseo Manuel de Lardizabal 4, 20018 San Sebastián, Spain

  • *cguarcello@unisa.it

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Vol. 13, Iss. 3 — March 2020

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