Quantifying Large Lattice Relaxations in Photovoltaic Devices

Marco Nardone, Yasas Patikirige, Kyoung E. Kweon, Curtis Walkons, Theresa Magorian Friedlmeier, Joel B. Varley, Vincenzo Lordi, and Shubhra Bansal
Phys. Rev. Applied 13, 024025 – Published 11 February 2020

Abstract

Temporal variations of Cu(In,Ga)Se2 photovoltaic device properties during light exposure at various temperatures and voltage biases for times up to 100 h are analyzed using the kinetic theory of large lattice relaxations. Open-circuit voltage and p-type doping increased with charge injection and decreased with temperature at low injection conditions. Lattice relaxation can account for both trends and activation energies extracted from the data are approximately 0.9 and 1.2 eV for devices with lower and higher sodium content, respectively. In these devices, increased sodium content resulted in higher initial p-type doping with greater stability. First-principles calculations providing revised activation energies for the (VSeVCu) complex suggest that this defect does not account for the metastability observed here.

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  • Received 27 October 2019
  • Accepted 17 January 2020

DOI:https://doi.org/10.1103/PhysRevApplied.13.024025

© 2020 American Physical Society

Physics Subject Headings (PhySH)

Atomic, Molecular & OpticalGeneral PhysicsCondensed Matter, Materials & Applied Physics

Authors & Affiliations

Marco Nardone1,*, Yasas Patikirige1, Kyoung E. Kweon2, Curtis Walkons3, Theresa Magorian Friedlmeier4, Joel B. Varley2, Vincenzo Lordi2, and Shubhra Bansal3

  • 1Department of Physics and Astronomy, Bowling Green State University, Bowling Green, Ohio 43403, USA
  • 2Lawrence Livermore National Laboratory, Materials Science Division, Livermore, California 94550, USA
  • 3Department of Mechanical Engineering, University of Nevada Las Vegas, Las Vegas, Nevada 89154, USA
  • 4Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg, Stuttgart, Germany

  • *marcon@bgsu.edu

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Vol. 13, Iss. 2 — February 2020

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