Voltage-Driven Nonlinearity in Magnetoelectric Heterostructures

Zhaoqiang Chu, Cunzheng Dong, Cheng Tu, Yifan He, Xianfeng Liang, Jiawei Wang, Yuyi Wei, Huaihao Chen, Xiangyu Gao, Caijiang Lu, Zengtai Zhu, Yuanhua Lin, Shuxiang Dong, Jeffrey McCord, and Nian-Xiang Sun
Phys. Rev. Applied 12, 044001 – Published 1 October 2019
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Abstract

Magnetoelectric (ME) heterostructures are widely studied to realize functional applications, such as magnetometers, ME random access memory (MERAM), ME antennas, energy harvesters, and voltage microwave devices. A good understanding of the nonlinearity of ME heterostructures can lead to potentially improved performance. Here, we present an investigation into the voltage-driven nonlinear phenomena of a ME heterostructure near its electromechanical resonance. The Stoner-Wohlfarth model and Duffing equation are used to study the ΔE effect in amorphous Metglas alloy and the nonlinear behavior of a ME heterostructure, respectively. Then, the dependence of the nonlinearity on bias field, driving voltage, mechanical quality factor, and the frequency sweeping direction are systematically studied and verified. Experimental results show that spring-hardening and -softening behavior is separately obtained at bias fields of 25 Oe and 50 Oe, respectively. In addition, hysteresis is observed when sweeping the frequency forward and then backward at a driving voltage of 5 V; this agrees well with qualitative analysis. This work provides a route to induce, control, and possibly exploit the nonlinear behavior of ME devices, such as magnetic-field energy harvesters and ME sensors and antennas.

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  • Received 23 June 2019

DOI:https://doi.org/10.1103/PhysRevApplied.12.044001

© 2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Zhaoqiang Chu1,2,*, Cunzheng Dong1, Cheng Tu1,3,†, Yifan He1, Xianfeng Liang1, Jiawei Wang1,6, Yuyi Wei1, Huaihao Chen1, Xiangyu Gao2, Caijiang Lu1, Zengtai Zhu1, Yuanhua Lin5, Shuxiang Dong2,6,‡, Jeffrey McCord7, and Nian-Xiang Sun1,§

  • 1Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA
  • 2College of Engineering, Peking University, Beijing 100871, China
  • 3School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China
  • 4College of Science, Zhejiang University of Technology, Hangzhou 310023, China
  • 5School of Materials Science and Engineering, Tsinghua University, Beijing, China
  • 6Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Peking University, 100871 Beijing, China
  • 7Institute for Materials Science, Kiel University, Kaiserstraße 2, 24143 Kiel, Germany

  • *zhaoqiangchu@pku.edu.cn
  • ctu@uestc.edu.cn
  • sxdong@pku.edu.cn
  • §n.sun@northeastern.edu

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Issue

Vol. 12, Iss. 4 — October 2019

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