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Voltage-Driven High-Speed Skyrmion Motion in a Skyrmion-Shift Device

Yizheng Liu, Na Lei, Chengxiang Wang, Xichao Zhang, Wang Kang, Daoqian Zhu, Yan Zhou, Xiaoxi Liu, Youguang Zhang, and Weisheng Zhao
Phys. Rev. Applied 11, 014004 – Published 3 January 2019
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Abstract

Magnetic skyrmions are promising information carriers for building future high-density and high-speed spintronic devices. However, to achieve a current-driven high-speed skyrmion motion, the required driving-current density is usually very large, which could be energy inefficient and even destroy the device due to Joule heating. The mechanism of voltage-driven skyrmion motion through equidistant identical electrodes on a uniformly thick nanowire is studied. The high-speed skyrmion motion is realized by utilizing a voltage shift, and the average skyrmion velocity reaches up to 259 m/s under a 0.45-V applied voltage. In comparison with the widely studied vertical current-driven model, the energy dissipation is three orders of magnitude lower in our voltage-driven model for the same speed motion of skyrmions. Our approach uncovers valuable opportunities for building skyrmion racetrack memories and logic devices with both ultra-low power consumption and ultra-high processing speed, which are appealing features for future spintronic applications.

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  • Received 28 June 2018
  • Revised 10 November 2018

DOI:https://doi.org/10.1103/PhysRevApplied.11.014004

© 2019 American Physical Society

Physics Subject Headings (PhySH)

General Physics

Authors & Affiliations

Yizheng Liu1, Na Lei1,*, Chengxiang Wang1, Xichao Zhang2, Wang Kang1, Daoqian Zhu1, Yan Zhou2, Xiaoxi Liu3, Youguang Zhang1, and Weisheng Zhao1,†

  • 1Fert Beijing Institute, BDBC, School of Microelectronics, Beihang University, Beijing 100191, China
  • 2School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong 518172, China
  • 3Department of Electrical and Computer Engineering, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan

  • *na.lei@buaa.edu.cn
  • weisheng.zhao@buaa.edu.cn

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Vol. 11, Iss. 1 — January 2019

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