First-order sidebands in circuit QED using qubit frequency modulation

Félix Beaudoin, Marcus P. da Silva, Zachary Dutton, and Alexandre Blais
Phys. Rev. A 86, 022305 – Published 3 August 2012

Abstract

Sideband transitions have been shown to generate controllable interaction between superconducting qubits and microwave resonators. Up to now, these transitions have been implemented with voltage drives on the qubit or the resonator, with the significant disadvantage that such implementations only lead to second-order sideband transitions. Here we propose an approach to achieve first-order sideband transitions by relying on controlled oscillations of the qubit frequency using a flux-bias line. Not only can first-order transitions be significantly faster, but the same technique can be employed to implement other tunable qubit-resonator and qubit-qubit interactions. We discuss in detail how such first-order sideband transitions can be used to implement a high fidelity controlled-not operation between two transmons coupled to the same resonator.

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  • Received 8 June 2012

DOI:https://doi.org/10.1103/PhysRevA.86.022305

©2012 American Physical Society

Authors & Affiliations

Félix Beaudoin1,2,3,*, Marcus P. da Silva2, Zachary Dutton2, and Alexandre Blais1

  • 1Département de Physique, Université de Sherbrooke, Sherbrooke, Québec, Canada J1K 2R1
  • 2Quantum Information Processing Group, Raytheon BBN Technologies, Cambridge, Massachusetts 02138, USA
  • 3Department of Physics, McGill University, Montréal, Québec, Canada H3A 2T8

  • *felix.beaudoin@mail.mcgill.ca

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Vol. 86, Iss. 2 — August 2012

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