Abstract
Entanglement distribution between trapped-atom quantum memories, viz. single atoms in optical cavities, is addressed. In most scenarios, the rate of entanglement distribution depends on the efficiency with which the state of traveling single photons can be transferred to trapped atoms. This loading efficiency is analytically studied for two-level, -level, -level, and double--level atomic configurations by means of a system-reservoir approach. An off-resonant nonadiabatic approach to loading -level trapped-atom memories is proposed, and the ensuing trade-offs between the atom-light coupling rate and input photon bandwidth for achieving a high loading probability are identified. The nonadiabatic approach allows a broad class of optical sources to be used, and in some cases it provides a higher system throughput than what can be achieved by adiabatic loading mechanisms. The analysis is extended to the case of two double- trapped-atom memories illuminated by a polarization-entangled biphoton.
8 More- Received 1 November 2006
DOI:https://doi.org/10.1103/PhysRevA.75.032318
©2007 American Physical Society