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Demonstration of an erbium-doped microdisk laser on a silicon chip

T. J. Kippenberg, J. Kalkman, A. Polman, and K. J. Vahala
Phys. Rev. A 74, 051802(R) – Published 16 November 2006

Abstract

An erbium-doped microlaser is demonstrated utilizing SiO2 microdisk resonators on a silicon chip. Passive microdisk resonators exhibit whispering-gallery-type modes (WGM’s) with intrinsic optical quality factors of up to 6×107 and were doped with trivalent erbium ions (peak concentration 3.8×1020cm3) using MeV ion implantation. Coupling to the fundamental WGM of the microdisk resonator was achieved by using a tapered optical fiber. Upon pumping of the I1524I1324 erbium transition at 1450nm, a gradual transition from spontaneous to stimulated emission was observed in the 1550nm band. Analysis of the pump-output power relation yielded a pump threshold of 43μW and allowed measuring the spontaneous emission coupling factor: β1×103.

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  • Received 1 August 2006

DOI:https://doi.org/10.1103/PhysRevA.74.051802

©2006 American Physical Society

Authors & Affiliations

T. J. Kippenberg*

  • Department of Applied Physics, California Institute of Technology, Pasadena, California 91125 USA

J. Kalkman and A. Polman

  • Center for Nanophotonics, FOM-Institute AMOLF, Amsterdam, The Netherlands

K. J. Vahala

  • Department of Applied Physics, California Institute of Technology, Pasadena, California 91125 USA

  • *Present address: Max Planck Institut für Quantenoptik, Garching, Germany
  • Electronic address: polman@amolf.nl
  • Electronic address: vahala@its.caltech.edu

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Issue

Vol. 74, Iss. 5 — November 2006

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