Subthreshold photodissociation of H2 in silicon

E. V. Lavrov
Phys. Rev. A 106, 013116 – Published 28 July 2022

Abstract

A photodissociation of interstitial H2 and D2 in single-crystalline Si by a laser field at 532 nm is reported. It is shown that in the course of Raman scattering measurements with a power density of around 2×106 W/cm2 the H2(D2) signal decreases with a characteristic time of a few minutes. At temperatures below 100 K the molecule transforms into a metastable state known as H2*, which includes one hydrogen atom located at the bond-centered site and the second one at the antibonding position along the same 111 direction. At temperatures above 100 K both dimers dissociate, whereby the products of fragmentation, inaccessible for the Raman scattering, are proposed to be atomic interstitials.

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  • Received 4 March 2022
  • Accepted 14 July 2022

DOI:https://doi.org/10.1103/PhysRevA.106.013116

©2022 American Physical Society

Physics Subject Headings (PhySH)

Atomic, Molecular & OpticalCondensed Matter, Materials & Applied Physics

Authors & Affiliations

E. V. Lavrov*

  • Institute of Applied Physics, Technische Universität Dresden, 01062 Dresden, Germany

  • *eduard.lavrov@tu-dresden.de

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Issue

Vol. 106, Iss. 1 — July 2022

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