The Magnetoresistance of Bismuth Crystals at Low Temperatures

P. B. Alers and R. T. Webber
Phys. Rev. 91, 1060 – Published 1 September 1953
PDFExport Citation

Abstract

Using bismuth monocrystals at 4.2°K, the magnetoresistive behavior of the metal has been investigated in fields ranging to 100 000 gauss. The crystals were mounted transverse to the field with the principal crystalline axis parallel to the specimen axis. It is observed that the magnetoresistance oscillates at twice the frequency of the susceptibility oscillations of the de Haas-van Alphen effect. The resistance oscillation is separated into two frequency components, one twice the other, and each component is related to a group of electrons having a certain effective mass. The group which is thought to be primarily responsible for the de Haas-van Alphen effect produces magnetoresistance oscillations of small amplitude and of the same frequency. The other group yields larger amplitude resistance oscillations of twice this frequency. Resistance minima have been found at fields of 23.2, 12.5, 8.8 and 6.5 kilogauss when the field is perpendicular to a binary axis of the crystal. The results are discussed in terms of the theory of Davydov and Pomeranchuk, and yield a degeneracy temperature of about 210°K.

  • Received 22 January 1953

DOI:https://doi.org/10.1103/PhysRev.91.1060

©1953 American Physical Society

Authors & Affiliations

P. B. Alers and R. T. Webber

  • U. S. Naval Research Laboratory, Washington, D. C.

References (Subscription Required)

Click to Expand
Issue

Vol. 91, Iss. 5 — September 1953

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Journals Archive

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×