Abstract
The electrical resistivities and the Hall constants of the compound semiconductors GaSe, Mo, Mo, and W, which crystallize in layer structures, have been measured at temperatures ranging from 100 to 700°K. The Hall mobilities derived from these measurements are all of the order of 100 /V sec at room temperature, and they exhibit a temperature dependence of the form , where for GaSe, for Mo, and for Mo and W. A short-range interaction is discussed which couples the charge carriers in highly anisotropic layer structures to the nonpolar optical lattice modes. The relatively low room-temperature mobilities as well as the high values of the exponents are explained in terms of the proposed interaction.
- Received 26 May 1967
DOI:https://doi.org/10.1103/PhysRev.163.743
©1967 American Physical Society