Optical Absorption and Photoconductivity in the Band Edge of βGa2O3

H. H. Tippins
Phys. Rev. 140, A316 – Published 4 October 1965
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Abstract

Optical absorption and photoconductivity have been observed in the ultraviolet in single crystals of nominally pure βGa2O3. At room temperature a steep absorption edge, characteristic of a band-to-band transition, is observed at 2700 Å. The edge is shifted approximately 100 Å toward shorter wavelengths when the temperature is reduced to 77°K. Photoconductivity begins coincident with the absorption edge at 77°K, but could not be detected at room temperature. A model is proposed in which the absorption arises as a result of excitation of an electron from the oxygen 2p band to the gallium 4s band. Calculations using this model and the Born-Haber cycle are in good agreement with the observed band gap of 4.7 eV. It is suggested that the much smaller band gap of βGa2O3 as compared with sapphire is due to the reduced coordination number of the ions involved in the transition.

  • Received 14 May 1965

DOI:https://doi.org/10.1103/PhysRev.140.A316

©1965 American Physical Society

Authors & Affiliations

H. H. Tippins

  • Aerospace Corporation, El Segundo, California

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Vol. 140, Iss. 1A — October 1965

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