Abstract
The effect of hydrostatic pressure on the following optical properties of GaP has been measured at room temperature: the fundamental absorption edge region from 2.2 to 2.7 eV, an infrared absorption band appearing in -type material at 0.3-0.5 eV, peaks in the reflectivity spectrum at 2.8 and 3.7 eV, and recombination radiation in forward-biased junctions at 1.7-2.3 eV. The results have been interpreted by means of a proposed energy band structure in which the conduction band states , , , are located at energies of 2.2, 2.5, 2.8, 3.7 eV, respectively, above the valence band maximum at . The following pressure coefficients have been measured (the transition involved is given in parenthesis), where energy is expressed in eV and pressure in bars: ; ; ; . The coefficients of and are close to those for the corresponding transitions in Si; that of is close to the corresponding coefficient in Ge. The weak reflectivity peak at 2.8 eV, the direct gap, shifts with temperature at a rate of about -4.6× eV/°K, compared to a value of about -5.2× eV/°K for the 2.2 eV indirect gap.
- Received 22 January 1964
DOI:https://doi.org/10.1103/PhysRev.134.A1628
©1964 American Physical Society