Abstract
The diffusion rate of Li in Si at high temperatures has been re-investigated using an outdiffusion technique. The resulting for is (2.21±0.07)× /sec at (800±5)°C and 2.4× /sec at (1350±5)°C. If these results are combined with ion drift results, the diffusion constant can be described by . The isotopic effect upon the diffusion has been investigated using and . At 800°C, the value for is ±0.02, in accordance with the expected inverse dependence on the square root of the mass. The ionic charge of the Li and the atomic mechanism for Li diffusion is discussed in the light of these and other results.
- Received 18 March 1960
DOI:https://doi.org/10.1103/PhysRev.119.1014
©1960 American Physical Society