Abstract
The theory of photoconduction through the reverse-biased junction in semiconductors is developed without the customary assumption that carrier generation in the junction depletion layer is negligible. Different from previous theories, the more general treatment leads to a voltage dependence of the photocurrent and its spectral distribution. When the incident light beam is modulated at frequencies comparable to the transit time through the depletion layer, a phase shift between the photon flux and photocurrent is noticed and transit-time rectification occurs.
- Received 5 May 1959
DOI:https://doi.org/10.1103/PhysRev.116.84
©1959 American Physical Society