Abstract
Drift mobility measurements have been made on eleven silicon single crystals ranging in resistivity from 19 to 180 ohm cm. The drift mobility of electrons () in the purest -type crystals and of holes () in the purest -type crystals can be expressed by the formulas and between 160 and 400°K. At 300°K and are 1350±100 and 480±15 (volt , respectively. The conductivity of some of these crystals was measured between 78 and 400°K, and provides independent evidence for the temperature dependences of mobility quoted in the foregoing.
Below 100°K hole mobility in the -type crystals decreases markedly, probably at least in part because of short-time trapping of the injected holes.
- Received 21 November 1955
DOI:https://doi.org/10.1103/PhysRev.101.1699
©1956 American Physical Society